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UGP7N60

UNISONIC TECHNOLOGIES
Part Number UGP7N60
Manufacturer UNISONIC TECHNOLOGIES
Description 600V SMPS N-CHANNEL IGBT
Published May 27, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UGP7N60 Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DE...
Datasheet PDF File UGP7N60 PDF File

UGP7N60
UGP7N60

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UGP7N60 Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UGP7N60 is a N-channel IGBT.
it uses UTC’s advanced technology to provide customers with high input impedance, high switching speed and low conduction loss, etc.
The UTC UGP7N60 is suitable for high voltage switching, high frequency switch mode power supplies.
 FEATURES * >100kHz Operation at 390V, 7A * 200kHz Operation at 390V, 5A * 600V Switching SOA Capability * High switching speed * High input impedance * Low conduction loss  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UGP7N60L-TA3-T UGP7N60G-TA3-T TO-220 UGP7N60L-TF3-T UGP7N60G-TF3-T TO-220F UGP7N60L-TN3-R UGP7N60G-TN3-R TO-252 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GCE GCE GCE Packing Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R203-048.
e UGP7N60  MARKING Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 4 QW-R203-048.
e UGP7N60 Preliminary Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 600 V Continuous Collector Current TC=25°C TC=110°C IC 34 14 A A Collector Current Pulsed (Note 2) Gate to Emitter Voltage Continuous ICM VGES 56 ±20 A V Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ=150°C VGEM SSOA ±30 35 (at 600V) V A Single Pulse Avalanche Energy at TC=25°C Power Dissipation Total at TC=25°C TO-220/TO-252 TO-220F Power Dissipation Derating TC>25°C TO-220/TO-252 TO-220F EAS PD 25 (at 7A) 125 41.
6 1 3 mJ W W W/°C W/°C Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
A...


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