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HBC124ES6R

CYStech Electronics
Part Number HBC124ES6R
Manufacturer CYStech Electronics
Description Dual NPN Digital Transistors
Published May 30, 2014
Detailed Description CYStech Electronics Corp. Dual NPN Digital Transistors Spec. No. : C363S6R Issued Date : 2009.04.30 Revised Date : 2011...
Datasheet PDF File HBC124ES6R PDF File

HBC124ES6R
HBC124ES6R

Overview
CYStech Electronics Corp.
Dual NPN Digital Transistors Spec.
No.
: C363S6R Issued Date : 2009.
04.
30 Revised Date : 2011.
02.
22 Page No.
: 1/6 HBC124ES6R Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Two DTC124E chips in a SOT-363 package.
• Mounting by SOT-323 automatic mounting machines is possible.
• Mounting cost and area can be cut in half.
• Transistor elements are independent, eliminating interference • Complements the HBA124ES6R • Pb-free package Equivalent Circuit HBC124ES6R Outline SOT-363R RBE2 RB2 TR1 RB1 RBE1 TR2 RB1=22kΩ , RB2=22 kΩ RBE1=22kΩ , RBE2=22 kΩ HBC124ES6R CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded.
Spec.
No.
: C363S6R Issued Date : 2009.
04.
30 Revised Date : 2011.
02.
22 Page No.
: 2/6 Symbol VCC VIN IO IO(max.
) Pd Tj Tstg Limits 50 -10~+40 30 100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Characteristics (Each Transistor, Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
3 56 15.
4 0.
8 Typ.
0.
1 22 1 250 Max.
0.
5 0.
3 0.
36 0.
5 28.
6 1.
2 Unit V V V mA uA kΩ MHz Test Conditions VCC=5V, IO=100µA VO=0.
2V, IO=5mA IO/II=10mA/0.
5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f =100MHz * * Transition frequency of the device Ordering Information De...


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