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IXFN180N20

IXYS
Part Number IXFN180N20
Manufacturer IXYS
Description Power MOSFETs Single Die MOSFET
Published May 30, 2014
Detailed Description HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary ...
Datasheet PDF File IXFN180N20 PDF File

IXFN180N20
IXFN180N20

Overview
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C IXFN 180N20 D VDSS ID25 RDS(on) trr = 200 V = 180 A = 10 mW < 250 ns S Maximum Ratings 200 200 ±20 ±30 180 100 720 36 64 4 5 700 -55 .
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+150 150 -55 .
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+150 2...


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