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IXTH152N085T

IXYS Corporation
Part Number IXTH152N085T
Manufacturer IXYS Corporation
Description N-Channel MOSFET
Published Jun 1, 2014
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ...
Datasheet PDF File IXTH152N085T PDF File

IXTH152N085T
IXTH152N085T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) =8 5 V = 152 A ≤ 7.
0 m Ω Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C Maximum Ratings 85 85 ± 20 152 75 410 25 750 3 360 -55 .
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+175 175 -55 .
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+175 V V V A A A A mJ TO-247 (IXTH) G D S (TAB) TO-3P (IXTQ) V/ns W °C °C °C °C °C G D S D = Drain TAB = D...


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