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IXYB82N120C3H1

Part Number	IXYB82N120C3H1
Manufacturer	IXYS Corporation
Description	High-Speed IGBT
Published	Jun 1, 2014
Detailed Description	1200V XPT TM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 VCES IC110 VCE(sat) tfi(typ)...
Datasheet	IXYB82N120C3H1 PDF File

Overview

1200V XPT TM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 VCES IC110 VCE(sat) tfi(typ) PLUS264TM = = ≤ = 1200V 82A 3.
2V 93ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 164 1 60 82 42 320 41 800 ICM = 164 @VCE ≤ VCES 1040 -55 .
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+150 150 -55 .
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+150 V V V V A A A A A A mJ A W °C °C °C °C °C N/lb.
g G C E ...

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IXYB82N120C3H1 High-Speed IGBT - IXYS Corporation

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