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IRF2907ZLPbF

International Rectifier
Part Number IRF2907ZLPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 4, 2014
Detailed Description PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Techno...
Datasheet PDF File IRF2907ZLPbF PDF File

IRF2907ZLPbF
IRF2907ZLPbF

Overview
PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.
5mΩ G S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB applications.
ID = 160A∗ D2 Pak IRF2907ZPbF IRF2907ZSPbF TO-262 IRF2907ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Wirebond Limited) Pulsed Drain Current Max.
170 120 160 * 680 300 2.
0 ± 20 270 690 See Fig.
12a,12b,15,16 -55 to + 175 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case k Junction-to-Ambient Parameter Typ.
––– 0.
50 ––– ––– 0.
50l ––– 62 40 Max.
Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state) j HEXFET® is a registered trademark of International Rectifier.
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irf.
com 1 07/22/10 http://www.
Datasheet4U.
com IRF2907Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parame...


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