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SVD4N60D

Silan
Part Number SVD4N60D
Manufacturer Silan
Description 600V N-Channel MOSFET
Published Jun 5, 2014
Detailed Description SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode...
Datasheet PDF File SVD4N60D PDF File

SVD4N60D
SVD4N60D

Overview
SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.
0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60DTR Package TO-220-3L TO-220F-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60D Material Pb free Pb free Halogen free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MI CROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
3 2010.
12.
13 Page 1 of 9 http://www.
Datasheet4U.
com SVD4N60D/F(G)/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 100 0.
8 Ratings SVD4N60T SVD4N60F(G) 600 ±30 4.
0 16 33 0.
26 276 -55～+150 -55～+150 77 0.
62 SVD4N60D Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings SVD4N60T 1.
25 62.
5 SVD4N60F(G) 3.
85 120 SVD4N60D 1.
61 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Curre...


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