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SSM3K36MFV

Part Number	SSM3K36MFV
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Jun 5, 2014
Detailed Description	SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV ○ High-Speed Switching Applications • ...
Datasheet	SSM3K36MFV PDF File

Overview

SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV ○ High-Speed Switching Applications • 1.
5-V drive • Low ON-resistance: Ron = 1.
52 Ω (max) (@VGS = 1.
5 V) : Ron = 1.
14 Ω (max) (@VGS = 1.
8 V) : Ron = 0.
85 Ω (max) (@VGS = 2.
5 V) : Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V) Absolute Maximum Ratings (Ta = 25˚C) 1.
2±0.
05 0.
8±0.
05 0.
4 0.
4 0.
22±0.
05 Unit: mm 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 1 2 3 0.
13±0.
05 0.
5±0.
05 Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 500 mA 1000 Drain power dissipation PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C VESM JEDEC JEITA 1:Gate 2:Source 3:Drain ― ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-1L1B temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 1.
5 mg (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note1:Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 0.
585 mm2) Marking 3 Equivalent Circuit (top view) 3 NX 1 2 1 2 Start of commercial production 2008-02 1 2014-03-01 SSM3K36MFV Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switch...

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SSM3K36MFV N-Channel MOSFET - Toshiba Semiconductor

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