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AON7502

Alpha & Omega Semiconductors
Part Number AON7502
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Jun 6, 2014
Detailed Description AON7502 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(o...
Datasheet PDF File AON7502 PDF File

AON7502
AON7502


Overview
AON7502 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 6VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 30A < 4.
7mΩ < 7.
6mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) Application • Load Switch Applications • Battery Power Management 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View 1 2 3 4 Top View D 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain ID TC=100°C CurrentG Maximum 30 ±25 30 23.
5 120 21 17 30 23 36 31 12.
5 3.
1 2 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain Current Avalanche Current C C IDM TA=25°C TA=70°C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C A A mJ V W W °C Avalanche energy L=0.
05mH C VDS Spike Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.
2 Max 40 75 4 Units °C/W °C/W °C/W Rev0: Nov.
2012 www.
aosmd.
com Page 1 of 6 http://www.
Datasheet4U.
com AON7502 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.
4 2.
2 3.
9 5.
5 6 85 0.
71 1 30 1022 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.
1 574 63 2.
2 15.
6 VGS=10V, VDS=15V, ID=20A 6.
2 4.
8 3.
5 7.
5 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4 17.
5 Min 30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IG...



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