DatasheetsPDF.com

10NK70Z

STMicroelectronics
Part Number 10NK70Z
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Jun 6, 2014
Detailed Description STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP10N...
Datasheet PDF File 10NK70Z PDF File

10NK70Z
10NK70Z

Overview
STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.
75Ω - 8.
6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP10NK70Z STP10NK70ZFP s s s s s s s VDSS 700 V 700 V RDS(on) < 0.
85 Ω < 0.
85 Ω ID 8.
6 A 8.
6 A Pw 150 W 35 W TYPICAL RDS(on) = 0.
75 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP10NK70Z STP10NK70ZFP MARKING P10NK70Z P10NK70ZFP PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE October 2002 1/10 http://www.
Datasheet4U.
com STP10NK70Z/STP10NK70ZFP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter STP10NK70Z Value STP10NK70ZFP Unit V V V 8.
6 (*) 5.
4 (*) 34 (*) 35 0.
28 A A A W W/°C KV V/ns 2500 V °C °C Drain-source Voltage (VGS =0 ) Drain-gate Voltage (RGS =2 0k Ω) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 8.
6 5.
4 34 150 1.
20 700 700 ± 30 4000 4.
5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤8.
6A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature a...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)