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NCE7190

NCE Power
Part Number NCE7190
Manufacturer NCE Power
Description N-Channel Enhancement Mode Power MOSFET
Published Jun 10, 2014
Detailed Description Pb Free Product http://www.ncepower.com NCE7190 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE719 0 ...
Datasheet PDF File NCE7190 PDF File

NCE7190
NCE7190

Overview
Pb Free Product http://www.
ncepower.
com NCE7190 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE719 0 uses adv anced trenc h techno logy and design to provide excellent R DS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● V DS = 71V,ID =90A RDS(ON) < 6.
8mΩ @ VGS=10V ( Typ:5.
9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking NCE7190 NCE7 Device 190 Device Package TO-220-3L Reel Size Tape width Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter S ymbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) I Pulsed Drain Current Maximum Power Dissipation Limit 71 ±20 90 63 320 170 Unit V V A A A W ID D (100℃) IDM PD Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v 1.
1 http://www.
Datasheet4U.
com Pb Free Product http://www.
ncepower.
com Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS 550 NCE7190 1.
13 W /℃ mJ -55 To 175 ℃ TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 0.
88 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Gate resistance Input Capacitance Output Capacitance R...


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