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9435GH

Advanced Power Electronics
Part Number 9435GH
Manufacturer Advanced Power Electronics
Description AP9435GH
Published Jun 16, 2014
Detailed Description AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast ...
Datasheet PDF File 9435GH PDF File

9435GH
9435GH

Overview
AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 20A Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The TO-252/TO-251 package is wid ely used for commercial-industrial application.
G D D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ±20 - 20 -13 -60 12.
5 0.
1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 10 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201017075-1/4 http://www.
Datasheet4U.
com AP9435GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.
5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Min.
-30 -1 - Typ.
10 8 1.
6 4.
3 6.
3 46 20 7.
4 570 80 75 Max.
Units 50 90 -3 -1 -25 ±100 16 740 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=± 20V ID=-10A VDS=-24V VGS=-4.
5V VDS=-15V ID=-10A RG=3.
3Ω,VGS=-10V RD=1.
5Ω VGS=0V VDS=-25V f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-...


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