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SST25VF032B

Silicon Storage Technology
Part Number SST25VF032B
Manufacturer Silicon Storage Technology
Description 32 Mbit SPI Serial Flash
Published Jun 16, 2014
Detailed Description 32 Mbit SPI Serial Flash A Microchip Technology Company SST25VF032B Data Sheet SST 25 series Serial Flash family featu...
Datasheet PDF File SST25VF032B PDF File

SST25VF032B
SST25VF032B

Overview
32 Mbit SPI Serial Flash A Microchip Technology Company SST25VF032B Data Sheet SST 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs.
The SST25VF032B devices are enhanced with improved operating frequency which lowers power consumption.
SST25VF032B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Features • Single Voltage Read and Write Operations – 2.
7-3.
6V • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device • High Speed Clock Frequency – Upt o8 0M Hz • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Superior Reliability – Endurance: 100,000 Cycles – Greater than 100 years Data Retention • Software Write Protection – Write protection through Block-Protection bits in status register • Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical) • Temperature Range – Industrial: -40°C to +85°C • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Packages Available – 8-lead SOIC (200 mils) – 8-contact WSON (5X6m m) • Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical) • All devices are RoHS compliant • Auto AddressIncrement(AAI) Word Programming – Decrease total chip programming time over Byte-Program operations ©2011 Silicon Storage Technology, Inc.
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