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AP09N70I-A-HF-3

Advanced Power Electronics
Part Number AP09N70I-A-HF-3
Manufacturer Advanced Power Electronics
Description N-channel Enhancement-mode Power MOSFET
Published Jun 17, 2014
Detailed Description Advanced Power Electronics Corp. AP09N70I-A-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100%...
Datasheet PDF File AP09N70I-A-HF-3 PDF File

AP09N70I-A-HF-3
AP09N70I-A-HF-3

Overview
Advanced Power Electronics Corp.
AP09N70I-A-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 0.
75 Ω 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP09N70I-A-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as off-line AC/DC converters.
G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 65 0 + 30 9 5 40 42 0.
34 Units V V A A A W W/°C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Energy2 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3 65 Unit °C/W °C/W Ordering Information AP09N70I-A-HF-3TB RoHS-compliant, halogen-free TO-220CFM, shipped in tubes ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200903053-3 1/5 http://www.
Datasheet4U.
com Advanced Power Electronics Corp.
AP09N70I-A-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BVDSS /∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 3 Min.
650 2 -2 - Typ.
0.
6 4.
5 44 11 12 19 21 56 4 2660 170 10 Max.
Units 0.
75 4 10 500 +100 V V/°C Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Tempe...


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