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Si2306BDS

Vishay
Part Number Si2306BDS
Manufacturer Vishay
Description N-Channel 30-V (D-S) MOSFET
Published Jun 17, 2014
Detailed Description - 0755-83307717 www.ping-web.com sales@ping-web.com Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODU...
Datasheet PDF File Si2306BDS PDF File

Si2306BDS
Si2306BDS

Overview
- 0755-83307717 www.
ping-web.
com sales@ping-web.
com Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
047 at VGS = 10 V 0.
065 at VGS = 4.
5 V ID (A) 4.
0 3.
5 Qg (Typ.
) 3.
0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306BDS (L6 )* * Marking Code Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.
04 1.
25 0.
8 - 55 to 150 4.
0 3.
5 20 0.
62 0.
75 0.
48 W °C 5s 30 ± 20 3.
16 2.
7 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Symb Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on FR4 board, t ≤ 5 s.
b.
Pulse width limited by maximum junction temperature.
c.
Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 73234 S-80642-Rev.
B, 24-Mar-08 www.
vishay.
com 1 t≤5s Steady State Steady State ol RthJA RthJF Typical 80 130 60 Maximum 100 166 75 °C/W Unit http://www.
Datasheet4U.
com ƽÍø www.
ping-web.
com 0755-83307717 sales@ping-web.
com ×îÈ«µÄµçÔ´ICƽ¼ÛÉÌ³Ç - Si2306BDS 0755-83307717 www.
ping-web.
com sales@ping-web.
com Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Sy Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea mbol V(BR)DSS VGS(th) IGSS IDSS ID(on) V RDS(on) Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, I...


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