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B9NK70Z

ST Microelectronics
Part Number B9NK70Z
Manufacturer ST Microelectronics
Description STB9NK70Z
Published Jun 19, 2014
Detailed Description N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZF...
Datasheet PDF File B9NK70Z PDF File

B9NK70Z
B9NK70Z

Overview
N-CHANNEL 700V - 1Ω - 7.
5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z s s s s s s s STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z VDSS 700 700 700 700 700 V V V V V RDS(on) < 1.
2 < 1.
2 < 1.
2 < 1.
2 < 1.
2 Ω Ω Ω Ω Ω ID 7.
5 A 7.
5 A 7.
5 A 7.
5 A 7.
5 A Pw 115 W 35 W 115 W 115 W 156 W 3 3 1 2 2 1 TYPICAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 TO-220FP 3 I2PAK 3 12 1 D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70ZT4 STB9NK70Z-1 STW9NK60Z April 2002 MARKING P9NK70Z P9NK70ZFP B9NK70Z B9NK70Z B9NK70Z-1 W9NK70Z PACKAGE TO-220 TO-220FP D2PAK D2PAK I2PAK TO-247 PACKAGING TUBE TUBE TUBE (ONLY UNDER REQUEST) TAPE & REEL TUBE TUBE 1/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 / D2PAK / I 2PAK Value TO-220FP TO-247 Unit VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation...


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