DatasheetsPDF.com

2SD732

Part Number	2SD732
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Jun 24, 2014
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current...
Datasheet	2SD732 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD732 isc websi...

Similar Datasheet

2SD700 NPN Transistor - Toshiba
2SD703A Power Transistors - Mospec Semiconductor
2SD705 NPN Transistor - INCHANGE
2SD706 NPN Transistor - INCHANGE
2SD711 NPN Power Transistor - Fuji
2SD711 NPN Transistor - INCHANGE
2SD715 NPN Transistor - INCHANGE
2SD716 NPN Transistor - Toshiba
2SD716 SILICON POWER TRANSISTOR - SavantIC
2SD716 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)