DatasheetsPDF.com

ST83003

STMicroelectronics
Part Number ST83003
Manufacturer STMicroelectronics
Description High voltage fast-switching NPN power transistor
Published Jun 24, 2014
Detailed Description ST83003 High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very high switching speed...
Datasheet PDF File ST83003 PDF File

ST83003
ST83003

Overview
ST83003 High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very high switching speed Application ■ Electronic ballast for fluorescent lighting 3 2 1 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The ST83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST93003, its complementary PNP transistor.
SOT-32 Figure 1.
Internal schematic diagram Table 1.
Device summary Marking Package SOT-32 Packaging Bag Order code ST83003 83003 December 2010 Doc ID 9085 Rev 4 1/11 www.
st.
com 11 Contents ST83003 Contents 1 2 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 Electrical characteristics (curves) .
.
.
.
5 3 4 5 Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
8 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
10 2/11 Doc ID 9085 Rev 4 ST83003 Electrical ratings 1 Electrical ratings Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.
75 A, tp < 10 µs) Collector current Collector peak current (tp < 5 ms) Base current Base peak current (tp < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max.
operating junction temperature Value 700 400 V(BR)EBO 1.
5 3 0.
75 1.
5 40 -65 to 150 150...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)