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PMPB40SNA

NXP
Part Number PMPB40SNA
Manufacturer NXP
Description 60V N-channel Trench MOSFET
Published Jun 25, 2014
Detailed Description DF N PMPB40SNA 2 July 2013 20 20 MD -6 60 V N-channel Trench MOSFET Product data sheet 1. General description N-ch...
Datasheet PDF File PMPB40SNA PDF File

PMPB40SNA
PMPB40SNA

Overview
DF N PMPB40SNA 2 July 2013 20 20 MD -6 60 V N-channel Trench MOSFET Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • • Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3.
Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4.
Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tsp = 25 °C VGS = 10 V; ID = 4.
8 A; Tj = 25 °C Conditions Tj = 25 °C Min -20 Typ Max 60 20 12.
9 Unit V V A Static characteristics drain-source on-state resistance 34 43 mΩ Scan...


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