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SR340-HF

Comchip
Part Number SR340-HF
Manufacturer Comchip
Description Schottky Barrier Rectifier
Published Jun 27, 2014
Detailed Description Schottky Barrier Rectifier Comchip SMD Diode Specialist SR320-HF Thru. SR3200-HF Forward current: 3.0A Reverse voltage...
Datasheet PDF File SR340-HF PDF File

SR340-HF
SR340-HF

Overview
Schottky Barrier Rectifier Comchip SMD Diode Specialist SR320-HF Thru.
SR3200-HF Forward current: 3.
0A Reverse voltage: 20 to 200V RoHS Device Halogen Free Features -Axial lead type devices for through hole design.
-Low power loss, high efficiency.
-High current capability, Low forward voltage drop.
-High surge capability.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of MIL-STD-19500/228 1.
0(25.
4) min.
DO-27 0.
052(1.
30) 0.
048(1.
20) DIA.
0.
375(9.
50) 0.
285(7.
20) 0.
220(5.
60) 0.
197(5.
00) DIA.
Mechanical Data -Case: Molded plastic, DO-201AD/DO-27 -Epoxy: UL94V-0 rate flame retardant.
-Lead: Axial lead, solderable per MIL-STD-202, Method 208 guranteed.
-Polarity: color band denoted cathode end.
-Weight: 1.
10 gram (approx.
).
1.
0(25.
4) min.
Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum forward voltage @3A , TA=25°C Operating junction temperature range Symbol SR320 -HF VRRM VRMS VDC VF TJ SR340 -HF 40 28 40 0.
50 SR360 -HF 60 42 60 0.
70 SR3100 SR3150 SR3200 Unit -HF -HF -HF 100 70 100 0.
81 150 105 150 0.
87 200 140 200 0.
90 V V V V °C 20 14 20 0.
45 -50 ~ +150 -50 ~ +175 Parameter Forward rectified current Forward surge current Reverse current see Fig.
1 Conditions Symbol IO IFSM IR IR RθJA CJ TSTG MIN.
TYP.
MAX.
3.
0 70 0.
5 20 Unit A A mA mA °C/W pF 8.
3ms single half sine-wave superimposed on rate load (JEDEC method) VR =VRRM TA=25°C VR =VRRM TA=100°C Thermal resistance Diode junction capacitance Storage temperature Junction to ambient f=1MHZ and applied 4V DC reverse Voltage 55 250 -55 +175 °C REV:A Company reserves the right to improve product design , functions and relia...


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