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STK0825F

AUK
Part Number STK0825F
Manufacturer AUK
Description Advanced Power MOSFET
Published Jun 30, 2014
Detailed Description Semiconductor STK0825F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features ...
Datasheet PDF File STK0825F PDF File

STK0825F
STK0825F

Overview
Semiconductor STK0825F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • High Voltage: BVDSS=250V(Min.
) Low Crss : Crss=13pF(Typ.
) Low gate charge : Qg=15nC(Typ.
) Low RDS(on) :RDS(on)=0.
43Ω(Max.
) Type NO.
STK0825F Marking STK0825 Package Code TO-220F-3L Ordering Information Outline Dimensions Φ3.
05~3.
35 9.
80~10.
20 unit : mm 2.
60~3.
00 15.
40~15.
80 12.
20~12.
60 9.
10~9.
30 12.
40~13.
00 1.
07 Min.
0.
90 Max.
0.
60 Max.
2.
54 Typ.
2.
54 Typ.
1 2 3 0.
60 Max.
3.
46 Typ.
4.
70 Max.
2.
70 Max.
PIN Connections 1.
Gate 2.
Drain 3.
Source KSD-T0O007-002 1 STK0825F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 250 ±30 8 5.
6 32 25 8 285 8 7.
4 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ.
- Max 5.
0 62.
5 Unit ℃/W KSD-T0O007-002 2 STK0825F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ (Tc=25°C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=250V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=4.
0A VDS=10V, ID=4.
0A VGS=0V, VDS=25V, f=1MHz Min.
250 2.
0 - Typ.
0.
35 4.
2 510 76 13 15 85 90 65 15 3 6 Max...


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