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IPI22N03S4L-15

Infineon Technologies
Part Number IPI22N03S4L-15
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jul 2, 2014
Detailed Description IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD vers...
Datasheet PDF File IPI22N03S4L-15 PDF File

IPI22N03S4L-15
IPI22N03S4L-15

Overview
IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 14.
6 22 PG-TO262-3-1 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N03L15 4N03L15 4N03L15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=22 A T C=25 °C Value 22 22 88 20 22 ±16 31 -55 .
.
.
+175 55/175/56 mJ A V W °C Unit A Rev.
2.
0 page 1 2007-03-09 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=10 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.
5 V, I D=11 A V GS=4.
5 V, I D=11 A, SMD version V GS=10 V, I D=22 A V GS=10 V, I D=22 A, SMD version 30 1.
0 1.
5 0.
01 2.
2 1 µA V 4.
9 62 62 40 K/W Values typ.
max.
Unit - 10 1000 - 5 1 17.
5 17.
2 12.
7 12.
4 60 10...


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