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VP0300

Supertex
Part Number VP0300
Manufacturer Supertex
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Published Jul 3, 2014
Detailed Description VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -30V RDS(ON) (max) 2.5Ω ID(ON) (...
Datasheet PDF File VP0300 PDF File

VP0300
VP0300

Overview
VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -30V RDS(ON) (max) 2.
5Ω ID(ON) (min) -1.
5A Order Number / Package TO-92 VP0300L Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
9 Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.
6 mm from case for 10 seconds.
7-227 BVDSS BVDGS ± 20V -55°C to +150°C 300°C SGD TO-92 Note: See Package Outline section for dimensions.
VP0300 Thermal Characteristics Package TO-92 ID (continuous)* -0.
32A ID (pulsed) -0.
87A Power Dissipation TC = 25°C 1.
0W °C/W 170 θja °C/W 125 θjc * ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gat...


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