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IRFP4768PbF

International Rectifier
Part Number IRFP4768PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jul 7, 2014
Detailed Description PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterr...
Datasheet PDF File IRFP4768PbF PDF File

IRFP4768PbF
IRFP4768PbF

Overview
PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ.
max.
ID 250V 14.
5mΩ 17.
5mΩ 93A D G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Max.
93 66 370 520 3.
4 ± 20 24 -55 to + 175 300 10lbfxin (1.
1Nxm) 770 See Fig.
14, 15, 22a, 22b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy c mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case ij Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ.
––– 0.
24 ––– Max.
0.
29 ––– 40 Units °C/W www.
irf.
com 1 02/26/09 IRFP4768PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min.
Typ.
Max.
Units 250 ––– ––– 3.
0 ––– ––– ––– ––– ––– ––– 0.
20 14.
5 ––– ––– ––– ––– ––– 0.
71 ––– ––– 17.
5 5.
0 20 250 100 -100 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mAc m...


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