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MMST4401

ROHM
Part Number MMST4401
Manufacturer ROHM
Description NPN Medium Power Transistor
Published Jul 10, 2014
Detailed Description SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 zFeatures 1) BVCEO>40V (IC=1m...
Datasheet PDF File MMST4401 PDF File

MMST4401
MMST4401

Overview
SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403.
zDimensions (Unit : mm) SST4401 zPackage, marking, and packaging specifications Part No.
Packaging type Marking Code Basic ordering unit (pieces) SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 ROHM : SST3 (1) Emitter (2) Base (3) Collector MMST4401 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 40 6 0.
6 0.
2 Unit V V V A W W ˚C ˚C ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Collector power dissipation PC 0.
35 Tj Junction temperature Tstg Storage temperature ∗ Mounted on a 7 5 0.
6mm CERAMIC SUBSTRATE + + 150 −55 to +150 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min.
60 40 6 − − − − − − 20 40 DC current transfer ratio hFE 80 100 40 Transition frequency Collector output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time fT Cob Cib td tr tstg tf 250 − − − − − − Typ.
− − − − − − − − − − − − − − − − − − − − − Max.
− − − 0.
1 0.
1 0.
4 0.
75 0.
95 1.
2 − − − 300 − − 6.
5 30 15 20 225 30 MHz pF pF ns ns ns ns − Unit V V V µA µA V V IC=100µA IC=1mA IE=100µA VCB=35V VEB=5V IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.
1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IE= −20mA, f=100MHz VCB=10V, f=100kHz VEB=0.
5V, f=100kHz VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA VCC=30V, IC=150mA, IB1=-IB2=15mA Conditions Rev.
B 1/3 SST4401 / MMST4...


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