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TSM9N90

Taiwan Semiconductor
Part Number TSM9N90
Manufacturer Taiwan Semiconductor
Description 900V N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File TSM9N90 PDF File

TSM9N90
TSM9N90

Overview
TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 1.
4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Features ● ● ● Low RDS(ON) 1.
4Ω (Max.
) Low gate charge typical @ 65nC (Typ.
) Improve dv/dt capability Block Diagram Ordering Information Part No.
TSM9N90CZ C0G Package TO-220 Packing 50pcs / Tube TSM9N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Tc = 25 C Derate above 25℃ o Symbol VDS VGS Tc = 25 C Tc = 100 C o o TO-220 900 ±30 9 5.
7 36 4.
5 857 9 29 290 2.
32 150 ITO-220 Unit V V ID IDM dv/dt EAS IAR EAR PD TJ TSTG 9* 5.
7 * 36 * A A V mJ A mJ 48 0.
38 -55 to +150 W ºC/W ºC o Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature C 1/10 Version: B13 TSM9N90 900V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA TO-220 0.
43 62.
5 ITO-220 2.
6 Unit o C/W Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Vo...


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