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FCB36N60N

Fairchild Semiconductor
Part Number FCB36N60N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Jul 11, 2014
Detailed Description FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features • RDS(on) = 81 ...
Datasheet PDF File FCB36N60N PDF File

FCB36N60N
FCB36N60N

Overview
FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features • RDS(on) = 81 mΩ (Typ.
)@ VGS = 10 V, ID = 18 A • Ultra low gate charge (Typ.
Qg = 86 nC) • Low effective output capacitance (Typ.
Coss.
eff = 361 pF) • 100% avalanche tested • RoHS compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.
This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness.
SupreMOS MOSFET is suitable for high frequency swit...


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