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FS8N60

FASICARD
Part Number FS8N60
Manufacturer FASICARD
Description 600V N-Channel MOSFET
Published Jul 11, 2014
Detailed Description FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High rugge...
Datasheet PDF File FS8N60 PDF File

FS8N60
FS8N60

Overview
FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.
5A,600v,RDS(on)=1.
0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings Symbol VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) PD Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Le...


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