DatasheetsPDF.com

IRGBC20SD2

International Rectifier
Part Number IRGBC20SD2
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 12, 2014
Detailed Description PD-9.1544 PROVISIONAL IRGBC20SD2 Standard Speed CoPack C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
Datasheet PDF File IRGBC20SD2 PDF File

IRGBC20SD2
IRGBC20SD2

Overview
PD-9.
1544 PROVISIONAL IRGBC20SD2 Standard Speed CoPack C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes • Optimized for line frequency operation (to 400HZ) VCES = 600V G E VCE(SAT) ≤ 2.
4V @VGE = 15V, IC = 10A Description Co-packaged IGBTs are a natural extension of International Rectifier's well-known IGBT line.
They provide the convenience of an IBGT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply applications.
n - ch a n n e l TO-220AB Absolute Maximum Ratings Parameter VCES I C @ TC = 25°C I C @ TC = 100°C I CM I LM I F @ TC = 100°C I FM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 19 10 76 38 7.
0 32 ± 20 60 24 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
------------------------- Typ.
----------0.
50 ----2 (0.
07) Max.
2.
1 3.
5 -----80 ------ Units °C/W g (oz) Revision 0:9/04/96 IRGBC20SD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min.
600 ∆V(BR)CES /∆ TJ ------VCE(on) ------Gate Threshold Voltage 3.
0 VGE(th) ∆VGE(th)/ ∆ TJ Temperature Coeff.
of Threshold Voltage ---Forward Transconductance „ 2.
0 gfe Zero Gate Voltage Collector Current ---ICES ---Diode Forward Voltage ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)