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ELM54801AA-N

Part Number	ELM54801AA-N
Manufacturer	ELM
Description	Dual P-channel MOSFET
Published	Jul 14, 2014
Detailed Description	Dual P-channel MOSFET ELM54801AA-N ■General description ELM54801AA-N uses advanced trench technology to provide excellen...
Datasheet	ELM54801AA-N PDF File

Overview

Dual P-channel MOSFET ELM54801AA-N ■General description ELM54801AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.
■Features • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.
5V) Rds(on) < 80mΩ (Vgs=-2.
5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Avalanche current Avalanche energy Power dissipation Junction and storage temperature range L=0.
1mH Ta=25°C Ta=70°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Ias, Iar Eas, Ear Pd Tj, Tstg Limit -30 ±12 -5 -4 -28 17 14 2.
0 1.
3 -55 to 150 Unit V V A A A mJ W °C 3 3 3 2 Note ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl Typ.
48.
0 74.
0 32.
0 Max.
62.
5 90.
0 40.
0 Unit °C/W °C/W °C/W Note 1 1, 4 ■Pin configuration SOP-8(TOP VIEW) 1 2 3 4 ■Circuit Pin No.
1 2 3 4 5 6 7 8 Pin name SOU...

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ELM54801AA-N Dual P-channel MOSFET - ELM

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