DatasheetsPDF.com

FLM5053-18F

SUMITOMO
Part Number FLM5053-18F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM5053-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 8.5dB ...
Datasheet PDF File FLM5053-18F PDF File

FLM5053-18F
FLM5053-18F


Overview
FLM5053-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.
0dBm (Typ.
) • High Gain: G1dB = 8.
5dB (Typ.
) • High PAE: hadd = 35% (Typ.
) • Low IM3 = -46dBc@Po = 32.
0dBm • Broad Band: 5.
0 to 5.
3GHz • Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5053-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.
C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.
C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (V DS ) should not exceed 10 volts.
2.
The forw ard and reverse gate currents should not exceed 26.
0 and -11.
6 mA respectively w ith gate resistance of 25ohm.
Rating 15 -5 83.
3 -65 to +175 175 Unit V V W deg.
C deg.
C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.
C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.
5kohm) Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=4800mA VDS=5V, IDS=480mA IGS=-480uA VDS=10V, IDS=0.
55 IDSS (Typ.
), f=5.
0 to 5.
3 GHz, ZS=ZL=50ohm f = 5.
3 GHz, Df = 10 MHz 2-Tone Test Pout = 32.
0dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth IK Class 3A Yes Min.
-1.
0 -5.
0 42.
0 7.
5 -44 - Limit Typ.
9.
0 4000 -2.
0 43.
0 8.
5 4800 35 -46 1.
6 - Max.
13.
5 -3.
5 6000 +/-0.
6 1.
8 80 Unit A mS V V dBm dB mA % dB dBc deg.
C/W deg.
C G.
C.
P.
: Gain Compression Point, S.
C.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)