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FLM5359-35F

SUMITOMO
Part Number FLM5359-35F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM5359-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.)...
Datasheet PDF File FLM5359-35F PDF File

FLM5359-35F
FLM5359-35F

Overview
FLM5359-35F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.
5dBm(Typ.
) • High Gain: G1dB=9.
0dB(Typ.
) • High PAE: hadd=35%(Typ.
) • Broad Band: 5.
3 to 5.
9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.
C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115.
4 -65 to +175 175 Limit <= 10 <= 107.
2 >=-23.
2 Unit V V W deg.
C deg.
C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=13ohm Reverse Gate Current IGR RG=13ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.
C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdo...


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