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FLM5964-4F

SUMITOMO
Part Number FLM5964-4F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (...
Datasheet PDF File FLM5964-4F PDF File

FLM5964-4F
FLM5964-4F


Overview
FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.
5dBm (Typ.
) • High Gain: G1dB =10.
0dB (Typ.
) • High PAE: hadd = 37% (Typ.
) • Low IM3 = -46dBc@Po = 25.
5dBm • Broad Band: 5.
9 to 6.
4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.
C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.
C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (V DS ) should not exceed 10 volts.
2.
The forw ard and reverse gate currents should not exceed 16.
0 and -2.
2 mA respectively w ith gate resistance of 100ohm.
Rating 15 -5 25 -65 to +175 175 Unit V V W deg.
C deg.
C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.
C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on JEDEC　JESD22-A114 (C=100pF, R=1.
5kohm) Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=1100mA VDS=5V, IDS=85mA IGS=-85uA VDS=10V, IDS=0.
65 IDSS (Typ.
), f=5.
9 to 6.
4 GHz, ZS=ZL=50ohm f = 6.
4 GHz, Df = 10 MHz 2-Tone Test Pout = 25.
5dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth IB Class 3A Yes Min.
-0.
5 -5 35.
5 9.
0 -44 - Limit Typ.
1700 1700 -1.
5 36.
5 10.
0 1100 37 -46 5.
0 - Max.
2600 -3.
0 1300 1.
2 6.
0 80 Unit mA mS V V dBm dB mA % dB dBc deg.
C/W deg.
C G.
C.
P.
: Gain Compressi...


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