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SLM5868-25F

Part Number	SLM5868-25F
Manufacturer	SUMITOMO
Description	C-Band Internally Matched FET
Published	Jul 14, 2014
Detailed Description	SLM5868-25F C-band Internally Matched FET FEATURES • High Output Power: P1dB=44.0dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.)...
Datasheet	SLM5868-25F PDF File

Overview

SLM5868-25F C-band Internally Matched FET FEATURES • High Output Power: P1dB=44.
0dBm(Typ.
) • High Gain: G1dB=9.
0dB(Typ.
) • High PAE: hadd=34%(Typ.
) • Broad Band: 5.
85 to 6.
75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The SLM5868-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.
C) Gate-Source Voltage (Tc=25deg.
C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 93.
7 -65 to +175 +175 Unit V V W deg.
C deg.
C RECOMMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=25 ohm RG=25 ohm -65 to +150 +155 Recom m end 10 +64.
0 -11.
2 Unit V mA mA deg.
C deg.
C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.
C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.
C.
P.
Pow er Gain at 1dB G.
C.
P.
Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr h add DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=6.
5A V DS=5V , IDS=500mA IGS=-500uA V DS=10V f= 5.
85 to 6.
75 GHz IDSDC=0.
65IDSS (typ.
) Zs=Z L=50 ohm f=6.
75 GHz Df=10MHz ，2-tone Test Pout=33.
0dBm (S.
C.
L.
) Channel to Case (10V x Idsr - Pout + Pin) x Rth S.
C.
L.
: Single Carrier Level Min.
-0.
5 -5.
0 43.
0 8.
0 -42 Lim it Typ.
10 10 -1.
5 44.
0 9.
0 6.
5 34 -45 1.
4 Max.
15.
0 -3.
0 7.
6 1.
6 1.
6 100 Unit A S V V dBm dB A % dB dBc deg.
C/W deg.
C G.
C.
P.
: Gain Com pression Point ESD Class 3A 4000V to 8000V Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.
5kohm) RoHS COM...

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SLM5868-25F C-Band Internally Matched FET - SUMITOMO

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