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FLM7785-12F

SUMITOMO
Part Number FLM7785-12F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1d...
Datasheet PDF File FLM7785-12F PDF File

FLM7785-12F
FLM7785-12F

Overview
FLM7785-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.
5dBm (Typ.
) High Gain: G1dB = 8.
5dB (Typ.
) High PAE: ηadd = 34% (Typ.
) Low IM3 = -46dBc@Po = 30.
5dBm Broad Band: 7.
7 ~ 8.
5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 57.
6 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 32.
0 and -5.
6 mA respectively with gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 8.
5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 30.
5dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.
65 IDSS (Typ.
), f = 7.
7 ~ 8.
5 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2400mA VDS = 5V, IDS = 240mA IGS = -300µA Min.
-0.
5 -5 40.
5 7.
5 -44 Limit Typ.
Max.
5400 8100 5000 -1.
5 41.
5 8.
5 -3.
0 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 3500 4500 34 -46 2.
3 ±0.
6 2.
6 80 CASE STYLE: IK G.
C.
P.
: Gain Compression Point, S.
C.
L.
: Single Carrier Level Edition 1.
3 August 2004 1 FLM7785-12F C-B...


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