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FLM0910-25F

Part Number	FLM0910-25F
Manufacturer	SUMITOMO
Description	X-Band Internally Matched FET
Published	Jul 14, 2014
Detailed Description	FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・Hi...
Datasheet	FLM0910-25F PDF File

Overview

FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.
) ・High Gain: G1dB=7.
0dB(Typ.
) ・High PAE: ηadd=30%(Typ.
) ・Broad Band: 9.
5～10.
5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.
7 -65 to +175 175 Unit V V W ℃ ℃ Recommended Operating Condition(Case Temperature Tc=25℃) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=25Ω RG=25Ω Condition Limit ≦10 ≦64 ≧-11.
2 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ΔG Rth ΔTch Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=6.
92A VDS=5V , IDS=500mA IGS=-500uA VDS=10V f=9.
5 - 10.
5 GHz IDS=0.
6Idss Zs=ZL=50Ω Min.
-0.
5 -5.
0 43 6.
0 - Limit Typ.
10.
8 10000 -1.
5 44 7.
0 6.
5 30 1.
4 - Max.
16.
2 -3.
0 7.
2 ±0.
6 1.
6 100 Unit A mS V V dBm dB A % dB ℃/W ℃ Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V X Idsr X Rth CASE STYLE: IK ESD Class Ⅲ 2000V　～ G.
C.
P.
:Gain Compression Point Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.
5kΩ) Edition 1.
3 September 2004 1 FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs.
INPUT POWER POWER DERATING CURVE 100 Total Power Dissipation [W] 46 44 VDS=10V, IDS(DC)=0.
60IDSS, f=10.
0GHz 70 60 50 40 30 20 10 0 24 26 28 30 32 34 36 38 40 42 Input Pow er (dBm ) Power Added Efficiency (%) 80 60 40 20 0 0 50 100 150 200 Case Temperature [o C] Output Power (dBm) 42 40 3...

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FLM0910-25F X-Band Internally Matched FET - SUMITOMO

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