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FLM1415-6F

Eudyna
Part Number FLM1415-6F
Manufacturer Eudyna
Description Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm (Typ.) High Gain: ...
Datasheet PDF File FLM1415-6F PDF File

FLM1415-6F
FLM1415-6F

Overview
FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.
0dBm (Typ.
) High Gain: G1dB = 5.
5dB (Typ.
) High PAE: ηadd = 20% (Typ.
) Low IM3 = -45dBc@Po = 26.
0dBm (Typ.
) Broad Band: 14.
5 ~ 15.
3GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1415-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 31.
2 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse g...


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