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BLW86

ASI
Part Number BLW86
Manufacturer ASI
Description NPN SILICON RF POWER TRANSISTOR
Published Jul 23, 2014
Detailed Description BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications u...
Datasheet PDF File BLW86 PDF File

BLW86
BLW86

Overview
BLW86 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz.
PACKAGE STYLE .
380 4L FLG B .
112 x 45° A FEATURES: • Common Emitter • PG = 7.
0 dB at 40 W/175 MHz • Omnigold™ Metalization System E C Ø.
125 NOM.
FULL R J .
125 B C D F E E MAXIMUM RATINGS IC VCBO VCE0 VEBO PDISS TJ TSTG θJC 5.
0 A 65 V 35 V 4.
0 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.
9 °C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
785 / 19.
94 .
720 / 18.
29 .
970 / 24.
64 .
004 / 0.
10 .
085 / 2.
16 .
160 / 4.
06 .
240 / 6.
10 .
230 / 5.
84 .
730 / 18.
54 .
980 / 24.
89 .
385 / 9.
78 .
006 / 0.
15 .
105 / 2.
67 .
180 / 4.
57 .
280 / 7.
11 .
255 / 6.
48 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO ICES hFE Cob PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.
0 V VCB = 30 V VCE = 28 V PIN = 7.
0 W IC = 500 mA f = 1.
0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 35 65 65 4.
0 1.
0 10 5.
0 200 65 7.
6 60 UNITS V V V V mA mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
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