DatasheetsPDF.com

SPN4402W

SYNC POWER
Part Number SPN4402W
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jul 24, 2014
Detailed Description SPN4402W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402W is the N-Channel logic enhancement mode power field...
Datasheet PDF File SPN4402W PDF File

SPN4402W
SPN4402W


Overview
SPN4402W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES  30V/12A,RDS(ON)=15mΩ@VGS=10V  30V/10A,RDS(ON)=18mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design APPLICATIONS  Power Management in Note book  Battery Powered System  DC/DC Converter  Load Switch  LCD Display inverter PIN CONFIGURATION(SOP–8) 2020/03/17 Ver.
3 PART MARKING Page 1 SPN4402W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4402WS8RGB SOP-8 ※ SPN4402WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Part Marking SPN4402W Typical 30 ±20 12 10 30 2.
3 2.
5 1.
6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W 2020/03/17 Ver.
3 Page 2 SPN4402W N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Trans...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)