DatasheetsPDF.com

SPP6507

SYNC POWER
Part Number SPP6507
Manufacturer SYNC POWER
Description Dual P-Channel MOSFET
Published Jul 24, 2014
Detailed Description SPP6507 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power fie...
Datasheet PDF File SPP6507 PDF File

SPP6507
SPP6507

Overview
SPP6507 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  P-Channel -30V/-2.
8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.
5A,RDS(ON)=115mΩ@VGS=-4.
5V -30V/-1.
5A,RDS(ON)=150mΩ@VGS=-2.
5V -30V/-1.
0A,RDS(ON)=215mΩ@VGS=-1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2020/02/19 Ver.
3 Page 1 SPP6507 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number Package SPP6507S26RGB SOT-23-6L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6507S26RGB : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Part Marking 07 Typical -30 ±12 -2.
8 -2.
1 -8 -1.
4 1.
15 0.
75 -55/150 -55/150 52 100 Unit V V A A A W ℃ ℃ ℃/W 2020/02/19 Ve...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)