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NCE55H12

NCE Power Semiconductor
Part Number NCE55H12
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 1, 2014
Detailed Description Pb Free Product http://www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE55H12...
Datasheet PDF File NCE55H12 PDF File

NCE55H12
NCE55H12

Overview
Pb Free Product http://www.
ncepower.
com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =55V,ID =120A RDS(ON) < 5.
5mΩ @ VGS=10V (Typ:4.
1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● ● ● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking NCE55H12 Device NCE55H12 Device Package TO-220 Reel Size Tape width Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS Limit 55 ±20 120 85 420 200 1.
33 1100 -55 To 175 Unit V V A A A W W/℃ mJ ℃ ID ID (100℃) IDM PD TJ,TSTG Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
2 Pb Free Product http://www.
ncepower.
com Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC NCE55H12 0.
75 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note...


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