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IPI110N20N3G

Infineon Technologies
Part Number IPI110N20N3G
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 3, 2014
Detailed Description IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent g...
Datasheet PDF File IPI110N20N3G PDF File

IPI110N20N3G
IPI110N20N3G

Overview
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max (TO263) ID 200 10.
7 88 V mW A • Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain c...


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