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MDF18N50TH

MagnaChip
Part Number MDF18N50TH
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Aug 4, 2014
Detailed Description MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF18N50 uses advanc...
Datasheet PDF File MDF18N50TH PDF File

MDF18N50TH
MDF18N50TH

Overview
MDF18N50 N-channel MOSFET 500V MDF18N50 N-Channel MOSFET 500V, 18 A, 0.
27Ω General Description The MDF18N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications.
Features VDS = 500V VDS = 550V ID = 18A RDS(ON) ≤ 0.
27Ω @ Tjmax @VGS = 10V @VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G G D S S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD Dv/dt EAS TJ, Tstg o o Rating 500 550 ±30 18 11 72 37 0.
29 4.
5 950 -55~150 Unit V V V A A A W W/ oC V/ns mJ o ID C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.
5 3.
4 Unit o C/W Dec 2009.
Version 1.
4 1 MagnaChip Semiconductor Ltd.
MDF18N50 N-channel MOSFET 500V Ordering Information Part Number MDF18N50TH Temp.
Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Bo...


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