DatasheetsPDF.com

HY5DU281622T-K

Part Number	HY5DU281622T-K
Manufacturer	Hyundai
Description	4 Banks x 2M x 16Bit Double Data Rate SDRAM
Published	Aug 4, 2014
Detailed Description	HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU281622 is a 134,217,72...
Datasheet	HY5DU281622T-K PDF File

Overview

HY5DU281622 4 Banks x 2M x 16Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU281622 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY5DU281622 is organized as 4 banks of 2,097,152x16.
HY5DU281622 offers fully synchronous operations referenced to both rising and falling edges of the clock.
While all addresses and control inputs are latched on the rising edges of the clock(falling edges of the CLK), Data(DQ), Data strobes(LDQS/UDQS) and Write data masks(LDM/UDM) inputs are sampled on both rising and falling edges of it.
The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth.
All input and output voltage levels are compatible with SSTL_2.
Mode Register set options include the length of pipeline (CAS latency of 2 / 2.
5 ), the number of consecutive read or write cycles initiated by a single control command (Burst ...

Similar Datasheet

HY5DU281622T 2nd 128M DDR SDRAM - Hynix Semiconductor
HY5DU281622T-H 4 Banks x 2M x 16Bit Double Data Rate SDRAM - Hyundai
HY5DU281622T-K 4 Banks x 2M x 16Bit Double Data Rate SDRAM - Hyundai
HY5DU281622T-L 4 Banks x 2M x 16Bit Double Data Rate SDRAM - Hyundai

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)