DatasheetsPDF.com

SMK1820D

KODENSHI KOREA
Part Number SMK1820D
Manufacturer KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Published Aug 6, 2014
Detailed Description SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     Hi...
Datasheet PDF File SMK1820D PDF File

SMK1820D
SMK1820D

Overview
SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     High Voltage: BVDSS=200V(Min.
) Low Crss : Crss=55pF(Typ.
) Low gate charge : Qg=22nC(Typ.
) Low RDS(on) :RDS(on)=0.
17Ω(Max.
) Type No.
SMK1820D Marking SMK1820 Package Code TO-252 PIN Connection D D Ordering Information G S G TO-252 S Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.
g.
) YWW -.
Y: Year Code -.
WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Symbol VDSS VGSS ID (TC=25℃) (TC=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 200 30 18 11.
3 72 70 18 453 18 13.
9 150 -55~150 Unit V V A A A W A mJ A mJ C Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case ** Symbol Rth(J-C) Rth(J-A) Typ.
- Max 1.
79 50 Unit ℃/W Junction-ambient ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O013-001 1 SMK1820D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=200V, VGS=0V VDS=160V, VGS=0V, TC=125℃ VDS=0V, VGS=30V VGS=10V, ID=9.
0A VDS=10V, ID=9.
0A VGS=0V, VDS=25V, f=1MHz Min.
200 2.
0 - Typ.
0.
14 10.
5 942 227 55 15 130 135 105 22 6.
6...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)