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SMK830F

KODENSHI KOREA
Part Number SMK830F
Manufacturer KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Published Aug 6, 2014
Detailed Description SMK830F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage : BVDSS=500V(Min.) Lo...
Datasheet PDF File SMK830F PDF File

SMK830F
SMK830F

Overview
SMK830F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage : BVDSS=500V(Min.
) Low Crss : Crss=33pF(Typ.
) Low gate charge : Qg=16nC(Typ.
) Low RDS(on) : RDS(on)=1.
5Ω(Max.
) G Package Code TO-220F-3L GD S TO-220F-3L PIN Connection D Ordering Information Type No.
SMK830F Marking SMK830 S Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD YMDD Δ SMK830 SDB20D45 Column 2 : Production Information e.
g.
) GYMDD -.
G : Factory management code -.
YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg Rating 500 ±30 4.
5 2.
8 18 30 4.
5 472 4.
5 5.
0 150 -55~150 Unit V V A A A W A mJ A mJ °C °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ.
- Max.
4.
16 62.
5 Unit ℃/W KSD-T0O049-001 1 SMK830F Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250uA, VGS=0V ID=250uA, VDS= VGS VDS=500V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=2.
25A VDS=10V, ID=2.
25A VGS=0V, VDS=25V f=1 MHz Min.
Typ.
Max.
500 2.
0 1.
2 5.
2 745 82 33 12 46 50 48 16 5.
5 4.
0 4.
0 1 ±100 1.
5 930 102 4...


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