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MCIRF7N60

Global Semiconductor
Part Number MCIRF7N60
Manufacturer Global Semiconductor
Description POWER MOSFET
Published Aug 6, 2014
Detailed Description MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω Description/ Features The MCIRF7N60 is used an ...
Datasheet PDF File MCIRF7N60 PDF File

MCIRF7N60
MCIRF7N60

Overview
MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.
0A VDS = 600V RDS(on)MAX = 1.
2Ω Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.
0 28.
0 600 ±30 150 -55 ~150 Units A A V V ℃ ℃ Case Styles 1、 GATE 2、 DRAIN 3、 S...


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