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CZD13003

Part Number	CZD13003
Manufacturer	SeCoS Halbleitertechnologie
Description	NPN Plastic Encapsulated Transistor
Published	Aug 8, 2014
Detailed Description	Elektronische Bauelemente CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor FEATURES  Power Switching Applicat...
Datasheet	CZD13003 PDF File

Overview

Elektronische Bauelemente CZD13003 1.
5A , 700V NPN Plastic Encapsulated Transistor FEATURES  Power Switching Applications RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252 CLASSIFICATION OF ts Rank A1 Range 2~2.
5(μs) A2 2.
5~3(μs) B1 3~3.
5(μs) B2 3.
5~4(μs) A BC D PACKAGE INFORMATION Package MPQ TO-252 2.
5K Leader Size 13 inch GE  Base Collector   Emitter K HF MJ N O P REF.
Millimeter Min.
Max.
REF.
Millimeter Min.
Max.
A 6.
35 6.
80 J 2.
30 REF.
B 4.
95 5.
50 K 0.
64 1.
14 C 2.
15 2.
40 M 0.
50 0.
95 D 0.
43 0.
9 N 1.
3 1.
8 E 6.
4 7.
5 O 0 0.
15 F 2.
40 3.
0 P 0.
58REF.
G 5.
40 6.
25 H 0.
60 1.
20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 1.
5 1.
25 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base-emitter voltage Transition Frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE fT tf tS Min.
700 400 9 20 5 2 Typ.
5 0.
5 - Max.
1 0.
5 1 30 0.
6 1.
2 3 4 Unit V V V mA mA mA V V V MHz μs μs Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=0.
5A VCE=5V, IC=1.
5A IC=1A, IB=250mA IC=1A, IB=250mA IE=2A VCE=10V, IC=100mA, f =1MHz IC=1A, IB1= -IB2=0.
2A,VCC=100V IC=250mA http://www.
SeCoSGmbH.
com/ 08-Aug-2014 Rev.
B Any changes of specification will not be informed individually.
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