DatasheetsPDF.com

GW40NC60KD

STMicroelectronics
Part Number GW40NC60KD
Manufacturer STMicroelectronics
Description 40A - 600V - short circuit rugged IGBT
Published Aug 8, 2014
Detailed Description STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop (VCE(sat)...
Datasheet PDF File GW40NC60KD PDF File

GW40NC60KD
GW40NC60KD

Overview
STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 1 3 • IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications • High frequency inverters • Motor drivers Figure 1.
Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Table 1.
Device summary Order code STGW40NC60KD Marking GW40NC60KD Package TO-247 Packaging Tube March 2014 This is information on a product in full production.
DocID14807 Rev 2 1/13 www.
st.
com 13 Contents STGW40NC60KD Contents 1 2 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 Electrical characteristics (curves) .
.
.
6 3 4 5 Test circuits .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
10 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
12 2/13 DocID14807 Rev 2 STGW40NC60KD Electrical ratings 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol VCES IC(1) IC(1) ICL(2) ICP (3) Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25 °C Collector current (continuous) at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Total dissipation at TC = 25 °C Short circuit withstand time, VCE = 0.
5 V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V Operating junction temperature V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)