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SMS501DE

Part Number	SMS501DE
Manufacturer	SeCoS Halbleitertechnologie
Description	N-Channel MOSFET
Published	Aug 9, 2014
Detailed Description	Elektronische Bauelemente SMS501DE 0.03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product ...
Datasheet	SMS501DE PDF File

Overview

Elektronische Bauelemente SMS501DE 0.
03A, 600V, RDS(ON) 700 Ω N-Ch Depletion Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(on) and gate charge for most synchronous buck converter applications.
FEATURES Advanced high cell density Trench technology Super low gate charge Excellent CdV/dt effect decline Green device available MARKING 501DE PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
10 2.
65 1.
20 1.
40 0.
89 1.
15 1.
78 2.
04 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
09 0.
18 0.
35 0.
65 0.
08 0.
20 0.
6 REF.
0.
95 BSC.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed...

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SMS501DE N-Channel MOSFET - SeCoS Halbleitertechnologie

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